Through-Silicon Via (TSV)

Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest struc...

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Bibliographic Details
Published in:Proceedings of the IEEE 2009-01, Vol.97 (1), p.43-48
Main Author: Motoyoshi, Makoto
Format: Article
Language:English
Subjects:
Application software
Chip scale packaging
Chip size package (CSP)
Cubes
Defense industry
Electronics industry
image sensor
Image sensors
Large scale integration
Mass production
micro bump
Military computing
Sensor arrays
Three dimensional
three-dimensional large-scale integration (3D-LSI)
through-silicon via (TSV)
Through-silicon vias
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Summary:Recently, the development of three-dimensional large-scale integration (3D-LSI) has been accelerated. Its stage has changed from the research level or limited production level to the investigation level with a view to mass production. The 3D-LSI using through-silicon via (TSV) has the simplest structure and is expected to realize a high-performance, high-functionality, and high-density LSI cube. This paper describes the current and future 3D-LSI technologies with TSV.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2008.2007462