Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond

• Main Authors: Kawasaki, H., Khater, M., Guillorn, M., Fuller, N., Chang, J., Kanakasabapathy, S., Chang, L., Muralidhar, R., Babich, K., Yang, Q., Ott, J., Klaus, D., Kratschmer, E., Sikorski, E., Miller, R., Viswanathan, R., Zhang, Y., Silverman, J., Ouyang, Q., Yagishita, A., Takayanagi, M., Haensch, W., Ishimaru, K.
• Format: Conference Proceeding
• Language: English
• Subjects: Doping; Electronic components; FinFETs; Ion implantation; Q measurement; Random access memory; Resists; Scalability; Shadow mapping; Silicon compounds
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.2008.4796661

Highly scaled FinFET SRAM cells, of area down to 0.128 m 2 , were fabricated using high-kappa dielectric and a single metal gate to demonstrate cell size scalability and to investigate V t variability for the 32 nm node and beyond. A single-sided ion implantation (I/I) scheme was proposed to reduce V t variation of Fin-FETs in a SRAM cell, where resist shadowing is a great issue. In the 0.187 m 2 cell, at V d = 0.6 V, a static noise margin (SNM) of 95 mV was obtained and stable read/write operations were verified from N-curve measurements. sigmaV t of transistors in 0.187 m 2 cells was measured with and without channel doping and the result was summarized in the Pelgrom plot. With the 22 nm node design rule, FinFET SRAM cell layouts were compared against planar-FET SRAM cell layouts. An un-doped FinFET SRAM cell was simulated to have significant advantage in read/write margin over a planar-FET SRAM cell, which would have higher sigmaV t mainly caused by heavy doping into the channel region.