High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

Sources responsible for local and inter-die threshold voltage (V t ) variability in undoped ultra-thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the first time. Charges in the gate dielectric and/or TiN gate workfunction fluctuations are determined as major co...

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Main Authors: Weber, O., Faynot, O., Andrieu, F., Buj-Dufournet, C., Allain, F., Scheiblin, P., Foucher, J., Daval, N., Lafond, D., Tosti, L., Brevard, L., Rozeau, O., Fenouillet-Beranger, C., Marin, M., Boeuf, F., Delprat, D., Bourdelle, K., Nguyen, B.-Y., Deleonibus, S.
Format: Conference Proceeding
Language:English
Subjects:
CMOS technology
Current measurement
Fluctuations
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
MOSFETs
Testing
Threshold voltage
Tin
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Summary:Sources responsible for local and inter-die threshold voltage (V t ) variability in undoped ultra-thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the first time. Charges in the gate dielectric and/or TiN gate workfunction fluctuations are determined as major contributors to the local V t variability and it is found that SOI thickness (T Si ) variations have a negligible impact down to T Si =7 nm. Moreover, T Si scaling is shown to limit both local and inter-die V t variability induced by gate length fluctuations. The highest matching performance ever reported for 25 nm gate length MOSFETs is achieved (A Vt =0.95 mV.mum), demonstrating the effectiveness of the undoped ultra-thin FDSOI architecture in terms of V t variability control.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796663