Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channe...

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Bibliographic Details
Main Authors: Krishnamohan, T., Donghyun Kim, Dinh, T.V., Pham, A.-t., Meinerzhagen, B., Jungemann, C., Saraswat, K.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Capacitive sensors
Delay effects
Effective mass
Electronic mail
Electrostatics
MOSFET circuits
Photonic band gap
Silicon
Tensile strain
Uniaxial strain
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Summary:Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, strained-Si and strained-Ge, p-MOS DGFETs have been presented and the optimum strain and channel/surface orientations for highest drive-lowest delay-lowest leakage have been obtained.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796845