Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films

Platinum (Pt)-incorporation into nickel silicide films is the promising approach to reduce the contact resistance (R C ) at silicide/Si interface. Physical properties of Ni 1-x Pt x Si films were investigated by using local electrode atom probe (LEAP); The distributions of Pt and dopants (such as As...

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Main Authors: Sonehara, T., Hokazono, A., Akutsu, H., Sasaki, T., Uchida, H., Tomita, M., Tsujii, H., Kawanaka, S., Inaba, S., Toyoshima, Y.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Contact resistance
Electrodes
Grain boundaries
Grain size
MOSFETs
Nickel
Platinum
Probes
Semiconductor films
Silicides
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Summary:Platinum (Pt)-incorporation into nickel silicide films is the promising approach to reduce the contact resistance (R C ) at silicide/Si interface. Physical properties of Ni 1-x Pt x Si films were investigated by using local electrode atom probe (LEAP); The distributions of Pt and dopants (such as As and B) were analyzed both at silicide/Si interface and at silicide grain boundary. The silicide grain-size miniaturization was clearly observed by Pt-incorporation. The impacts of silicide grain size on electrical properties and thermal stability were clarified depending on the Pt concentration. Finally, R C reduction depending on the incorporated-Pt concentration was experimentally shown in both nMOSFETs and pMOSFETs.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796851