Investigation of resistance in n-doped Si wires using NEGF formalism

In this work we use a full 3D Non-Equilibrium Green Function formalism in the effective mass approximation to calculate the resistance and resistivity of a thin silicon nanowire transistor and a doped silicon nanowire. The Non-Equilibrium green function equations are solved self-consistent with the...

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Bibliographic Details
Main Authors: Martinez, A., Brown, A., Seoane, N., Asenov, A.
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Doping
Effective mass
Electrostatics
Green function
MOSFET circuits
Poisson equations
Schrodinger equation
Silicon
Wires
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Summary:In this work we use a full 3D Non-Equilibrium Green Function formalism in the effective mass approximation to calculate the resistance and resistivity of a thin silicon nanowire transistor and a doped silicon nanowire. The Non-Equilibrium green function equations are solved self-consistent with the Poisson equation. The resistances are calculated by averaging the resulting currents from an ensemble of wires and transistors. The number and spatial location of the discrete dopants differ for each device in the ensemble. The calculated resistivities agree with the bulk resistivity corresponding to the average dopant concentration used in our simulations to generate the profiles of discrete dopants.
ISSN:2163-4971
2643-1300
DOI:10.1109/SCED.2009.4800522