Study of the Density of States of a-InGaZnO Using Field-Effect Technique

This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain cu...

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Bibliographic Details
Main Authors: Chen, C., Fung, T.C., Abe, K., Kumomi, H., Kanicki, J.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Channel bank filters
Computer science
Current measurement
Dielectrics and electrical insulation
Flat panel displays
Radio frequency
Temperature dependence
Thin film transistors
Voltage
Online Access:Request full text
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Summary:This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (I D ) versus the gate-to-source voltage (V GS ) at different temperatures from 30degC up to 90degC were measured. Calculated DOS from the subthreshold regime appears to be low with a characteristic energy of about 110 meV. The DOS is larger and has a steeper slope with a characteristic energy of about 30 meV.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2008.4800779