Study of the Density of States of a-InGaZnO Using Field-Effect Technique

This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain cu...

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Main Authors: Chen, C., Fung, T.C., Abe, K., Kumomi, H., Kanicki, J.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous materials
Channel bank filters
Computer science
Current measurement
Dielectrics and electrical insulation
Flat panel displays
Radio frequency
Temperature dependence
Thin film transistors
Voltage
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Fung, T.C.
Abe, K.
Kumomi, H.
Kanicki, J.
description This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (I D ) versus the gate-to-source voltage (V GS ) at different temperatures from 30degC up to 90degC were measured. Calculated DOS from the subthreshold regime appears to be low with a characteristic energy of about 110 meV. The DOS is larger and has a steeper slope with a characteristic energy of about 30 meV.
doi_str_mv 10.1109/DRC.2008.4800779
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_4800779</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4800779</ieee_id><sourcerecordid>4800779</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-7ea9460210fac16d541698fb3a61895851622fcd02235f482ec69d38c35a50233</originalsourceid><addsrcrecordid>eNo1kEtLAzEUheMLnNbuBTfzBzLePCdZyvQJhYIdN25KzNzYSB21SRf996LW1TkfB77FIeSWQcUY2PvxY1NxAFNJA1DX9owMmORSMiuFOCcF1xKoNkpckJGtzf_G1SUpmJKGirqGazJI6Q1ACWZUQebrfOiO5Uco8xbLMfYp5l9cZ5cx_TRHF_3MPfer8inF_rWcRtx1dBIC-ly26Ld9_DrgDbkKbpdwdMohaaeTtpnT5Wq2aB6WNFrItEZnpQbOIDjPdKck09aEF-E0M1YZxTTnwXfAuVBBGo5e204YL5RTwIUYkrs_bUTEzec-vrv9cXM6RHwDR19NRg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Study of the Density of States of a-InGaZnO Using Field-Effect Technique</title><source>IEEE Xplore All Conference Series</source><creator>Chen, C. ; Fung, T.C. ; Abe, K. ; Kumomi, H. ; Kanicki, J.</creator><creatorcontrib>Chen, C. ; Fung, T.C. ; Abe, K. ; Kumomi, H. ; Kanicki, J.</creatorcontrib><description>This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (I D ) versus the gate-to-source voltage (V GS ) at different temperatures from 30degC up to 90degC were measured. Calculated DOS from the subthreshold regime appears to be low with a characteristic energy of about 110 meV. The DOS is larger and has a steeper slope with a characteristic energy of about 30 meV.</description><identifier>ISSN: 1548-3770</identifier><identifier>ISBN: 9781424419425</identifier><identifier>ISBN: 1424419425</identifier><identifier>EISSN: 2640-6853</identifier><identifier>EISBN: 1424419433</identifier><identifier>EISBN: 9781424419432</identifier><identifier>DOI: 10.1109/DRC.2008.4800779</identifier><language>eng</language><publisher>IEEE</publisher><subject>Amorphous materials ; Channel bank filters ; Computer science ; Current measurement ; Dielectrics and electrical insulation ; Flat panel displays ; Radio frequency ; Temperature dependence ; Thin film transistors ; Voltage</subject><ispartof>2008 Device Research Conference, 2008, p.151-152</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4800779$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54533,54898,54910</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4800779$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, C.</creatorcontrib><creatorcontrib>Fung, T.C.</creatorcontrib><creatorcontrib>Abe, K.</creatorcontrib><creatorcontrib>Kumomi, H.</creatorcontrib><creatorcontrib>Kanicki, J.</creatorcontrib><title>Study of the Density of States of a-InGaZnO Using Field-Effect Technique</title><title>2008 Device Research Conference</title><addtitle>DRC</addtitle><description>This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (I D ) versus the gate-to-source voltage (V GS ) at different temperatures from 30degC up to 90degC were measured. Calculated DOS from the subthreshold regime appears to be low with a characteristic energy of about 110 meV. The DOS is larger and has a steeper slope with a characteristic energy of about 30 meV.</description><subject>Amorphous materials</subject><subject>Channel bank filters</subject><subject>Computer science</subject><subject>Current measurement</subject><subject>Dielectrics and electrical insulation</subject><subject>Flat panel displays</subject><subject>Radio frequency</subject><subject>Temperature dependence</subject><subject>Thin film transistors</subject><subject>Voltage</subject><issn>1548-3770</issn><issn>2640-6853</issn><isbn>9781424419425</isbn><isbn>1424419425</isbn><isbn>1424419433</isbn><isbn>9781424419432</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2008</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1kEtLAzEUheMLnNbuBTfzBzLePCdZyvQJhYIdN25KzNzYSB21SRf996LW1TkfB77FIeSWQcUY2PvxY1NxAFNJA1DX9owMmORSMiuFOCcF1xKoNkpckJGtzf_G1SUpmJKGirqGazJI6Q1ACWZUQebrfOiO5Uco8xbLMfYp5l9cZ5cx_TRHF_3MPfer8inF_rWcRtx1dBIC-ly26Ld9_DrgDbkKbpdwdMohaaeTtpnT5Wq2aB6WNFrItEZnpQbOIDjPdKck09aEF-E0M1YZxTTnwXfAuVBBGo5e204YL5RTwIUYkrs_bUTEzec-vrv9cXM6RHwDR19NRg</recordid><startdate>200806</startdate><enddate>200806</enddate><creator>Chen, C.</creator><creator>Fung, T.C.</creator><creator>Abe, K.</creator><creator>Kumomi, H.</creator><creator>Kanicki, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200806</creationdate><title>Study of the Density of States of a-InGaZnO Using Field-Effect Technique</title><author>Chen, C. ; Fung, T.C. ; Abe, K. ; Kumomi, H. ; Kanicki, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7ea9460210fac16d541698fb3a61895851622fcd02235f482ec69d38c35a50233</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Amorphous materials</topic><topic>Channel bank filters</topic><topic>Computer science</topic><topic>Current measurement</topic><topic>Dielectrics and electrical insulation</topic><topic>Flat panel displays</topic><topic>Radio frequency</topic><topic>Temperature dependence</topic><topic>Thin film transistors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Chen, C.</creatorcontrib><creatorcontrib>Fung, T.C.</creatorcontrib><creatorcontrib>Abe, K.</creatorcontrib><creatorcontrib>Kumomi, H.</creatorcontrib><creatorcontrib>Kanicki, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chen, C.</au><au>Fung, T.C.</au><au>Abe, K.</au><au>Kumomi, H.</au><au>Kanicki, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Study of the Density of States of a-InGaZnO Using Field-Effect Technique</atitle><btitle>2008 Device Research Conference</btitle><stitle>DRC</stitle><date>2008-06</date><risdate>2008</risdate><spage>151</spage><epage>152</epage><pages>151-152</pages><issn>1548-3770</issn><eissn>2640-6853</eissn><isbn>9781424419425</isbn><isbn>1424419425</isbn><eisbn>1424419433</eisbn><eisbn>9781424419432</eisbn><abstract>This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (I D ) versus the gate-to-source voltage (V GS ) at different temperatures from 30degC up to 90degC were measured. Calculated DOS from the subthreshold regime appears to be low with a characteristic energy of about 110 meV. The DOS is larger and has a steeper slope with a characteristic energy of about 30 meV.</abstract><pub>IEEE</pub><doi>10.1109/DRC.2008.4800779</doi><tpages>2</tpages></addata></record>
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subjects Amorphous materials
Channel bank filters
Computer science
Current measurement
Dielectrics and electrical insulation
Flat panel displays
Radio frequency
Temperature dependence
Thin film transistors
Voltage
title Study of the Density of States of a-InGaZnO Using Field-Effect Technique
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T19%3A24%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Study%20of%20the%20Density%20of%20States%20of%20a-InGaZnO%20Using%20Field-Effect%20Technique&rft.btitle=2008%20Device%20Research%20Conference&rft.au=Chen,%20C.&rft.date=2008-06&rft.spage=151&rft.epage=152&rft.pages=151-152&rft.issn=1548-3770&rft.eissn=2640-6853&rft.isbn=9781424419425&rft.isbn_list=1424419425&rft_id=info:doi/10.1109/DRC.2008.4800779&rft.eisbn=1424419433&rft.eisbn_list=9781424419432&rft_dat=%3Cieee_CHZPO%3E4800779%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-7ea9460210fac16d541698fb3a61895851622fcd02235f482ec69d38c35a50233%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4800779&rfr_iscdi=true