Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier

In summary, an N-face HEMT with good DC and RF properties was demonstrated. The use of AlN for electron confinement eliminates alloy scattering and offers a strong back barrier to mitigate short channel effects for highly scaled submicron devices. N-face devices are therefore expected to deliver exc...

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Bibliographic Details
Main Authors: Man Hoi Wong, Yi Pei, Rongming Chu, Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Etching
Gallium nitride
HEMTs
MODFETs
Plasma applications
Plasma confinement
Plasma devices
Plasma temperature
Scattering
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Summary:In summary, an N-face HEMT with good DC and RF properties was demonstrated. The use of AlN for electron confinement eliminates alloy scattering and offers a strong back barrier to mitigate short channel effects for highly scaled submicron devices. N-face devices are therefore expected to deliver excellent power density and efficiency with low leakage at microwave and mm-wave frequencies.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2008.4800802