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Internal phase inversion narrow bandwidth MEMS filter

This paper reports a novel capacitively coupled twin beam resonator internal phase inversion filter fabricated in a SOI MEMS process. A narrow bandwidth of 0.0157% is demonstrated with a low control-voltage of -0.87 V. The bandwidth can be substantially reduced by utilizing an electrical coupling sp...

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Bibliographic Details
Main Authors: Yan, J., Seshia, A.A., Le Phan, K., van Beek, J.T.M.
Format: Conference Proceeding
Language:English
Subjects:
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Summary:This paper reports a novel capacitively coupled twin beam resonator internal phase inversion filter fabricated in a SOI MEMS process. A narrow bandwidth of 0.0157% is demonstrated with a low control-voltage of -0.87 V. The bandwidth can be substantially reduced by utilizing an electrical coupling spring as opposed to a mechanical coupling-spring. The bandwidth is tunable with control achieved using a differential DC bias. A summary and comparison with other members of the phase inversion filter family is also included.
ISSN:1051-0117
DOI:10.1109/ULTSYM.2008.0168