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Internal phase inversion narrow bandwidth MEMS filter
This paper reports a novel capacitively coupled twin beam resonator internal phase inversion filter fabricated in a SOI MEMS process. A narrow bandwidth of 0.0157% is demonstrated with a low control-voltage of -0.87 V. The bandwidth can be substantially reduced by utilizing an electrical coupling sp...
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Main Authors: | , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | This paper reports a novel capacitively coupled twin beam resonator internal phase inversion filter fabricated in a SOI MEMS process. A narrow bandwidth of 0.0157% is demonstrated with a low control-voltage of -0.87 V. The bandwidth can be substantially reduced by utilizing an electrical coupling spring as opposed to a mechanical coupling-spring. The bandwidth is tunable with control achieved using a differential DC bias. A summary and comparison with other members of the phase inversion filter family is also included. |
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ISSN: | 1051-0117 |
DOI: | 10.1109/ULTSYM.2008.0168 |