GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm -1 , allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2009-05, Vol.15 (3), p.968-972
Main Authors: Bisping, D., Pucicki, D., Fischer, M., Koeth, J., Zimmermann, C., Weinmann, P., Hofling, S., Kamp, M., Forchel, A.
Format: Article
Language:English
Subjects:
Amplifiers
Beams (radiation)
Brightness
continuous-wave (CW) lasers
Devices
Diode lasers
Emission
epitaxial growth
Fiber lasers
Laser diodes
Laser excitation
Optical fiber amplifiers
optical pumping
Power generation
Pump lasers
Pumping
Quantum dot lasers
Quantum electronics
Quantum well lasers
semiconductor epitaxial layers
Semiconductor lasers
Stimulated emission
Wavelengths
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Summary:GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm -1 , allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors M 2 down to 1.4, high brightness of up to 23 MW/cm 2 middotsr, and nearly spatial single-mode emission have been obtained.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2009.2014250