Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rect...

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Bibliographic Details
Published in:IEEE electron device letters 2009-05, Vol.30 (5), p.430-432
Main Authors: Wanjun Chen, King-Yuen Wong, Chen, K.J.
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Aluminum gallium nitrides
boost converter
Breakdown voltage
Converters
Electric potential
field-effect rectifier (FER)
fluorine plasma ion implantation
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
Integrated circuit technology
MODFETs
normally-off HEMT
Prototypes
Rectifiers
Semiconductor devices
switch-mode power supply
Switches
Switching converters
Transistors
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Summary:We demonstrate a single-chip switch-mode boost converter that features a monolithically integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit was fabricated on a standard AlGaN/GaN HEMT epitaxial wafer grown with GaN-on-Si technology. The fabricated rectifier with a drift length of 15 mum exhibits a breakdown voltage of 470 V, a turn-on voltage of 0.58 V, and a specific on-resistance of 2.04 mOmegaldrcm 2 . The L-FER exhibits no reverse recovery current associated with the turn-off transient because of its unipolar nature. A prototype of GaN-based boost converter that includes monolithically integrated rectifiers and transistors is demonstrated using conventional GaN-on-Si wafers for the first time to prove the feasibility of the GaN-based power IC technology.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2015897