Zn Mg O Homojunction-Based Ultraviolet Photodetector

Zn 1-x Mg x O p-n photodiodes were fabricated on (0001) sapphire substrates using a pulsed laser deposition technique with different Mg contents. Ti-Au and Ni-Au metals deposited using vacuum evaporation were used as n-type and p-type contacts, respectively. The X-ray diffraction analysis showed the...

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Bibliographic Details
Published in:IEEE photonics technology letters 2009-07, Vol.21 (13), p.887-889
Main Author: Shukla, G.
Format: Article
Language:English
Subjects:
Detectors
Optical diffraction
Optical films
Optical pulses
p-n junction
Photodiode
Photodiodes
Photonic band gap
Pulsed laser deposition
pulsed laser deposition (PLD)
ultraviolet (UV) photodetector
X-ray diffraction
X-ray lasers
Zinc
Zn _{1 - {x}} Mg _{x} O
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Summary:Zn 1-x Mg x O p-n photodiodes were fabricated on (0001) sapphire substrates using a pulsed laser deposition technique with different Mg contents. Ti-Au and Ni-Au metals deposited using vacuum evaporation were used as n-type and p-type contacts, respectively. The X-ray diffraction analysis showed the Zn 1-x Mg x O double layers have a single phase hexagonal wurtzite structure. The optical bandgap of Zn 1-x Mg x O films has been tuned from 3.27 to 4.26 eV by increasing the Mg content x =0.0 to x =0.34. Correspondingly, the cutoff wavelength of the resultant detectors varies from 380 to 284 nm. Zn 1-x Mg x O p-n photodiodes with different Mg contents exhibit very good performance, with a very low dark current (< 20 pA) at the bias voltage of 10 V. The ultraviolet to visible rejection ratio is more than three orders of magnitude.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2009.2020060