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Blue-green laser diodes
The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are curre...
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creator | Gunshor, R.L. Han, J. Nurmikko, A.V. |
description | The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors. |
doi_str_mv | 10.1109/CORNEL.1995.482414 |
format | conference_proceeding |
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The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.</description><identifier>ISSN: 1079-4700</identifier><identifier>ISBN: 9780780339705</identifier><identifier>ISBN: 0780324420</identifier><identifier>ISBN: 9780780324428</identifier><identifier>ISBN: 0780339703</identifier><identifier>DOI: 10.1109/CORNEL.1995.482414</identifier><language>eng</language><publisher>IEEE</publisher><subject>Diode lasers ; Electrical resistance measurement ; Laser modes ; Optical films ; Plasma temperature ; Substrates ; Surface emitting lasers ; Temperature control ; Vertical cavity surface emitting lasers ; Zinc compounds</subject><ispartof>Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, p.2-8</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/482414$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4047,4048,27923,54553,54918,54930</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/482414$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gunshor, R.L.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><creatorcontrib>Nurmikko, A.V.</creatorcontrib><title>Blue-green laser diodes</title><title>Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits</title><addtitle>CORNEL</addtitle><description>The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.</description><subject>Diode lasers</subject><subject>Electrical resistance measurement</subject><subject>Laser modes</subject><subject>Optical films</subject><subject>Plasma temperature</subject><subject>Substrates</subject><subject>Surface emitting lasers</subject><subject>Temperature control</subject><subject>Vertical cavity surface emitting lasers</subject><subject>Zinc compounds</subject><issn>1079-4700</issn><isbn>9780780339705</isbn><isbn>0780324420</isbn><isbn>9780780324428</isbn><isbn>0780339703</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1995</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj01LAzEQQAMqWGvPQk_9A1knmcnO5KhLrcJiQfRcdpuJrKwfbPTgv7dQ4cG7PXjGLB1UzkG8brZPj-u2cjGGisSToxOziCxwADEyhFMzc8DREgOcm4tS3gACSZCZubodf9S-Tqofq7ErOq3S8Jm0XJqz3I1FF_-em5e79XNzb9vt5qG5ae3ggL5tpkPJc86EErFnBOl6YE1a96HOKXrBfRKvSIEY99wn7LzjWiTVzA7nZnnsDqq6-5qG92763R038A_9ETl0</recordid><startdate>1995</startdate><enddate>1995</enddate><creator>Gunshor, R.L.</creator><creator>Han, J.</creator><creator>Nurmikko, A.V.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1995</creationdate><title>Blue-green laser diodes</title><author>Gunshor, R.L. ; Han, J. ; Nurmikko, A.V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-f400527ff43893b7308ab07ede6b56fd9283cd82e345473c7bd3a217688d67713</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1995</creationdate><topic>Diode lasers</topic><topic>Electrical resistance measurement</topic><topic>Laser modes</topic><topic>Optical films</topic><topic>Plasma temperature</topic><topic>Substrates</topic><topic>Surface emitting lasers</topic><topic>Temperature control</topic><topic>Vertical cavity surface emitting lasers</topic><topic>Zinc compounds</topic><toplevel>online_resources</toplevel><creatorcontrib>Gunshor, R.L.</creatorcontrib><creatorcontrib>Han, J.</creatorcontrib><creatorcontrib>Nurmikko, A.V.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gunshor, R.L.</au><au>Han, J.</au><au>Nurmikko, A.V.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Blue-green laser diodes</atitle><btitle>Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits</btitle><stitle>CORNEL</stitle><date>1995</date><risdate>1995</risdate><spage>2</spage><epage>8</epage><pages>2-8</pages><issn>1079-4700</issn><isbn>9780780339705</isbn><isbn>0780324420</isbn><isbn>9780780324428</isbn><isbn>0780339703</isbn><abstract>The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.</abstract><pub>IEEE</pub><doi>10.1109/CORNEL.1995.482414</doi><tpages>7</tpages></addata></record> |
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identifier | ISSN: 1079-4700 |
ispartof | Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, p.2-8 |
issn | 1079-4700 |
language | eng |
recordid | cdi_ieee_primary_482414 |
source | IEEE Xplore All Conference Series |
subjects | Diode lasers Electrical resistance measurement Laser modes Optical films Plasma temperature Substrates Surface emitting lasers Temperature control Vertical cavity surface emitting lasers Zinc compounds |
title | Blue-green laser diodes |
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