SOIAS: dynamically variable threshold SOI with active substrate

This paper describes a low voltage, silicon on insulator, active substrate (SOIAS) technology which addresses the problems of increased leakage currents in high performance, low voltage circuits. The threshold voltage is dynamically variable through the application of a voltage to an insulated back...

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Bibliographic Details
Main Authors: Vieri, C., Yang, I., Chandrakasan, A., Antoniadis, D.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Circuits
CMOS technology
Leakage current
Low voltage
Semiconductor films
Silicon on insulator technology
Substrates
Switches
Threshold voltage
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Summary:This paper describes a low voltage, silicon on insulator, active substrate (SOIAS) technology which addresses the problems of increased leakage currents in high performance, low voltage circuits. The threshold voltage is dynamically variable through the application of a voltage to an insulated back gate for high performance and low leakage.
DOI:10.1109/LPE.1995.482475