An exclusive-nor based on resonant interband tunneling FET's

We have proposed and demonstrated an XNOR device based on the negative differential resistance in a resonant interband tunneling diode and the current control capabilities of field effect transistors. DC and timing measurements have confirmed the operations of the device. Simulations and discussions...

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Bibliographic Details
Published in:IEEE electron device letters 1996-03, Vol.17 (3), p.94-96
Main Authors: Shen, J., Tehrani, S., Goronkin, H., Kramer, G., Tsui, R.
Format: Article
Language:English
Subjects:
FETs
Gallium arsenide
Indium gallium arsenide
Logic devices
Resistors
Resonance
Resonant tunneling devices
Semiconductor diodes
Virtual colonoscopy
Voltage
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Summary:We have proposed and demonstrated an XNOR device based on the negative differential resistance in a resonant interband tunneling diode and the current control capabilities of field effect transistors. DC and timing measurements have confirmed the operations of the device. Simulations and discussions will be presented.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.485178