Microscopic characterization of field emitter array structure and work function by scanning Maxwell-stress microscopy

Microscopic images of both the structures and surface potentials of various field emitter arrays (FEAs) were measured by scanning Maxwell-stress microscopy (SMM). Results of SMM measurements clearly showed nanometre-scale irregularities in the structures and structure-related surface potential distr...

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Bibliographic Details
Main Authors: Itoh, J., Nazuka, Y., Inoue, T., Yokoyama, H., Kanemaru, S.
Format: Conference Proceeding
Language:English
Subjects:
Chromium
Field emitter arrays
Force measurement
Gold
Laboratories
Niobium
Scanning electron microscopy
Silicon on insulator technology
Spatial resolution
Surface topography
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Summary:Microscopic images of both the structures and surface potentials of various field emitter arrays (FEAs) were measured by scanning Maxwell-stress microscopy (SMM). Results of SMM measurements clearly showed nanometre-scale irregularities in the structures and structure-related surface potential distributions. From these results, work-function values have been derived for various emitter materials such as Si, Cr, Mo, W, etc. by using an Au film as a reference material; workfunction of Au was assumed as 5.1 eV. Experimental procedure and results are described in detail.
DOI:10.1109/IVMC.1995.486997