Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer

We compare dynamic SEU characteristics of GaAs complementary HIGFET devices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test results on shift register and flip-flop devices from the same process lot demonstrate that the L...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1995-12, Vol.42 (6), p.1850-1855
Main Authors: Marshall, P.W., Dale, C.J., Weatherford, T., Carts, M., McMorrow, D., Peczalski, A., Baier, S., Nohava, J., Skogen, J.
Format: Article
Language:English
Subjects:
Buffer layers
Circuit testing
Flip-flops
Gallium arsenide
Optical pulses
Performance evaluation
Pulse circuits
Pulse measurements
Shift registers
Temperature
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Summary:We compare dynamic SEU characteristics of GaAs complementary HIGFET devices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test results on shift register and flip-flop devices from the same process lot demonstrate that the LT GaAs layer provides immunity from upsets, even at an LET value of 90 MeV/spl middot/cm/sup 2//mg. This result is also consistent with pulsed laser measurements performed on the same flip-flop circuits used in the ion test.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.489226