Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p/sup +/ plug modification approach for SEE hardening of power MOSFETs...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1995-12, Vol.42 (6), p.1935-1939
Main Authors: Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P., Calvett, M.-C., Calvel, P.
Format: Article
Language:English
Subjects:
Bipolar transistors
Charge carrier lifetime
Computational modeling
Discrete event simulation
Doping
Medical simulation
MOSFETs
Plugs
Semiconductor process modeling
Silicon
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Summary:2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p/sup +/ plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.489237