Effective-mass model of surface scattering in locally oxidized Si nanowires

We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional effective mass equation and apply a quantum transpor...

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Bibliographic Details
Main Authors: Drouvelis, P., Fagas, G.
Format: Conference Proceeding
Language:English
Subjects:
Atomic measurements
Effective mass
Equations
Intraband scattering
Nanowires
Oxidation
Particle scattering
Rough surfaces
Silicon
silicon nanowires
Surface roughness
Wire
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Summary:We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional effective mass equation and apply a quantum transport formalism to calculate the conductance for typical potential profiles. Comparison of our results with hole-transport calculations using atomistic models in conjunction with density functional theory (DFT) points to an intra-subband scattering mechanism from a potential well.
DOI:10.1109/ULIS.2009.4897584