A Novel Analysis of a Ku-Band Planar p-i-n Diode Limiter

Two new analyses for a single-stage limiter were presented; one is an analytic approach based on the approximation of the voltage waveforms of a p-i-n diode in the limiter, while the other models the p-i-n diode by a p-n diode. The analytic expressions resulting from the analytic approach explicitly...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2009-06, Vol.57 (6), p.1447-1460
Main Authors: YANG, Seong-Sik, KIM, Tak-Young, KONG, Deok-Kyu, KIM, So-Su, YEOM, Kyung-Whan
Format: Article
Language:English
Subjects:
Applied sciences
Approximation
Circuit properties
Diodes
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Exact solutions
FETs
Gallium arsenide
Image analysis
Insertion loss
Limiter
Mathematical analysis
Microwave circuits
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
Microwaves
Monolithic integrated circuits
Noise levels
p-i-n diode
P-i-n diodes
Silicon carbide
Thermal conductivity
Voltage
Waveforms
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Summary:Two new analyses for a single-stage limiter were presented; one is an analytic approach based on the approximation of the voltage waveforms of a p-i-n diode in the limiter, while the other models the p-i-n diode by a p-n diode. The analytic expressions resulting from the analytic approach explicitly show the role of the diode parameters on the limiter performances, which can be used as a guide to select adequate p-i-n diodes for the limiter. The two analyses were verified using the large-signal p-i-n diode model developed by measurements. Our analysis was then extended to multistage limiters. Based on our analysis, we designed and fabricated a limiter with an insertion loss of 1.3 dB and a flat leakage of 11.7 dBm for a Ku -band input power of 20 W.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2009.2019993