MOCVD regrowth of InP on RIE patterned substrates for p-substrate 1.3 /spl mu/m BH laser application

We have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H/sub 2/S flow rates. It is found that the growth rate of the n-InP layer of the sidewall of the mesa is significantly affected by the H/sub 2/S flow rate. Consequently the regr...

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Bibliographic Details
Main Authors: Takemi, M., Kimura, T., Suzuki, D., Shiba, T., Shibata, K., Mihashi, Y., Takamiya, S., Aiga, M.
Format: Conference Proceeding
Language:English
Subjects:
Gases
Indium phosphide
Inductors
Laser applications
Masers
MOCVD
Scanning electron microscopy
Semiconductor laser arrays
Shape control
Substrates
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Summary:We have investigated the growth behavior of sulfur-doped n-InP layers around the dry-etched mesas as a function of various H/sub 2/S flow rates. It is found that the growth rate of the n-InP layer of the sidewall of the mesa is significantly affected by the H/sub 2/S flow rate. Consequently the regrown shape of the embedding layer is found to be exactly controlled by the H/sub 2/S flow rate. Using this technique, we have fabricated a p-substrate 1.3/spl mu/m BH laser with a pnp current-blocking structure around the dry-etched mesa and realized excellent lasing characteristics with high reliability for the first time.
DOI:10.1109/ICIPRM.1996.492266