InP-based MISFETs using CdS passivation

High electron mobility with high carrier peak and saturation velocities make InP a desirable material for high speed insulated-gate field-effect transistors. High breakdown field, good thermal conductivity, and a low ionization coefficient make InP equally attractive for solid-state microwave power...

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Bibliographic Details
Main Authors: Vaccaro, K., Davis, A., Dauplaise, H.M., Lorenzo, J.P.
Format: Conference Proceeding
Language:English
Subjects:
Conducting materials
Electric breakdown
Electron mobility
FETs
III-V semiconductor materials
Indium phosphide
Insulation
MISFETs
Passivation
Thermal conductivity
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Summary:High electron mobility with high carrier peak and saturation velocities make InP a desirable material for high speed insulated-gate field-effect transistors. High breakdown field, good thermal conductivity, and a low ionization coefficient make InP equally attractive for solid-state microwave power applications. Insulated gates are preferable to Schottky gates since larger operating voltages and higher output powers are more readily obtained. The main impediment to III-V insulated gate technology is the high density of traps at the insulator/semiconductor interface. Interface states adversely influence the effect of applied gate bias on the active channel, resulting in reduced transconductance and poor long-term device stability. Several researchers have investigated processes to reduce the density of traps at the interface to acceptable levels (D/sub it/
DOI:10.1109/ICIPRM.1996.492388