Analytical modeling of the tunneling current in Schottky barrier carbon nanotube field effect transistor using the Verilog-A language

In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation of this device. The simulation results obtained using this model are in close agreement with numerica...

Full description

Saved in:
Bibliographic Details
Main Authors: Najari, M., Fregonese, S., Maneux, C., Zimmer, T., Mnif, H., Masmoudi, N.
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
CNTFETs
five
four
Hardware design languages
One
Schottky barriers
three
Tunneling
two
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation of this device. The simulation results obtained using this model are in close agreement with numerical calculation results. This model can be implemented with a hardware description language (HDL) language like Verilog- A or VHDL-AMS for portability and standardization.
DOI:10.1109/SSD.2009.4956817