A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS

• Main Authors: Trinh, C., Shibata, N., Nakano, T., Ogawa, M., Sato, J., Takeyama, Y., Isobe, K., Le, B., Moogat, F., Mokhlesi, N., Kozakai, K., Hong, P., Kamei, T., Iwasa, K., Nakai, J., Shimizu, T., Honma, M., Sakai, S., Kawaai, T., Hoshi, S., Yuh, J., Hsu, C., Tseng, T., Li, J., Hu, J., Liu, M., Khalid, S., Chen, J., Watanabe, M., Lin, H., Yang, J., McKay, K., Nguyen, K., Pham, T., Matsuda, Y., Nakamura, K., Kanebako, K., Yoshikawa, S., Igarashi, W., Inoue, A., Takahashi, T., Komatsu, Y., Suzuki, C., Kanazawa, K., Higashitani, M., Lee, S., Murai, T., Lan, J., Huynh, S., Murin, M., Shlick, M., Lasser, M., Cernea, R., Mofidi, M., Schuegraf, K., Quader, K.
• Format: Conference Proceeding
• Language: English
• Subjects: Circuit testing; CMOS technology; Flash memory; Joining processes; Noise level; Noise reduction; Threshold voltage; Throughput; Very large scale integration
• ISSN: 0193-6530; 2376-8606
• DOI: 10.1109/ISSCC.2009.4977400

Today NAND flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. To satisfy the market demand for lower cost per bit and higher density nonvolatile memory, in addition to technology scaling, 2 b/cell MLC technology was introduced. Recently MLC NAND flash memories with more than 2 b/cell have been reported. To meet market demands we develop a 5.6 Mb/s 64 Gb 4 b/cell NAND flash memory in 43 nm CMOS. At 5.6 Mb/s, it is suitable for many mainstream applications. The chip has two 32 Gb memory arrays. One NAND string is composed of 66 NAND cells (64 + 2 dummies). With 64 wordlines (WL) per block, 4 pages per WL (4 b/cell), and an 8 KB page size, with block size of 2 MB. The performance is improved with page size extended to 8 KB, by programming 8 KB x 4 b/cell x 2 planes at the same time.