High power 4H-SiC static induction transistors

Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs developed a maximum output power of 225 W at 600 MHz, a...

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Bibliographic Details
Main Authors: Siergiej, R.R., Clarke, R.C., Aganval, A.K., Brandt, C.D., Burk, A.A., Morse, A., Orphanos, P.A.
Format: Conference Proceeding
Language:English
Subjects:
Electric breakdown
Electron mobility
Gain
Geometry
Power generation
Silicon carbide
Space charge
Testing
Thermal conductivity
Voltage
Online Access:Request full text
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Summary:Static induction transistors have been demonstrated in 4H-SiC. SiC specific semiconductor processing technologies such as epitaxy, reactive ion etching, and sidewall Schottky gates were employed. Under pulsed power test conditions, 4H-SiC SITs developed a maximum output power of 225 W at 600 MHz, a power added efficiency of 47%, and a gain of 8.7 dB. Maximum channel current was 1 A/cm, and the maximum blocking voltage was 200 V.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499213