A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

A consistent model for the intrinsic time dependent dielectric breakdown (TDDB) of thin oxides is introduced. This model links the existing anode hole injection and the electron trap generation models together and describes wearout as a hole induced generation of electron traps. Breakdown is defined...

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Bibliographic Details
Main Authors: Degraeve, R., Groeseneken, G., Bellens, R., Depas, M., Maes, H.E.
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Dielectric breakdown
Dielectric thin films
Electric breakdown
Electron traps
Electronic mail
Filling
Predictive models
Quadratic programming
Stress
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Description
Summary:A consistent model for the intrinsic time dependent dielectric breakdown (TDDB) of thin oxides is introduced. This model links the existing anode hole injection and the electron trap generation models together and describes wearout as a hole induced generation of electron traps. Breakdown is defined as conduction via these traps from one interface to the other. Implementing the model in a simulator, the oxide thickness dependence of the Weibull slope of the Q/sub BD/-distribution is predicted, and, using the unique relationship between hole fluence and generated electron trap density, the decrease of the critical hole fluence with oxide thickness is explained.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1995.499353