Study on solid phase epitaxy of sputtered SiGe film

The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscat...

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Bibliographic Details
Main Authors: Qi, W.J., Li, B.Z., Jiang, G.B., Huang, W.N., Gu, Z.G., Lan, C.H.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Epitaxial growth
Germanium silicon alloys
Ion beams
Raman scattering
Silicon germanium
Solids
Spectroscopy
Substrates
Temperature
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Summary:The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectroscopy show the epitaxial character of SiGe film on Si substrate.
DOI:10.1109/ICSICT.1995.500239