Predictive modeling of SiC-device power Schottky diode for investigations in power electronics

A predictive electrical-thermal model for a silicon carbide (SIC) power Schottky diode based on semiconductor device equations and measured results has been developed for prospective behavior investigations of this device in different power electronic circuits. The model has been implanted in the ci...

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Bibliographic Details
Main Authors: Kneifel, M., Silber, D., Held, R.
Format: Conference Proceeding
Language:English
Subjects:
Circuit simulation
Differential equations
Electric variables measurement
Power electronics
Power measurement
Predictive models
Schottky diodes
Semiconductor device measurement
Semiconductor devices
Silicon carbide
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Summary:A predictive electrical-thermal model for a silicon carbide (SIC) power Schottky diode based on semiconductor device equations and measured results has been developed for prospective behavior investigations of this device in different power electronic circuits. The model has been implanted in the circuit simulator SABER and is suitable to simulate static and switching power dissipation, EMI effects and several device failure modes.
DOI:10.1109/APEC.1996.500449