Resistance changes of SnO/sub 2/ thin films suitable for microelectronic gas sensors

A simple method for the separate estimation of the electrical sheet resistivity (/spl rho//sub s/) and the contact resistivity (/spl rho//sub c/) is developed. The influence of an oxygen annealing on /spl rho//sub s/ and /spl rho//sub c/ of thin SnO/sub 2/ layers with W/Al, Cr/Al and Ti/Al contacts...

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Bibliographic Details
Main Authors: Popova, L.I., Andreev, S.K., Gueorguiev, V.K., Manolov, E.B.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Artificial intelligence
Conductivity
Contact resistance
Gas detectors
Microelectronics
Semiconductor materials
Testing
Thin film sensors
Tin
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Summary:A simple method for the separate estimation of the electrical sheet resistivity (/spl rho//sub s/) and the contact resistivity (/spl rho//sub c/) is developed. The influence of an oxygen annealing on /spl rho//sub s/ and /spl rho//sub c/ of thin SnO/sub 2/ layers with W/Al, Cr/Al and Ti/Al contacts is investigated as an illustration of the method. The method is applicable for evaluation of very high resistivity layers, because "potential" measurements are not needed.
DOI:10.1109/ICMEL.1995.500931