InP-based DHBT technology for high-speed mixed signal and digital applications

We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of Gt 4.5 V and cut-off frequency (f T ) values of Gt 300 GHz. Using this technology, state-of-the-art mixed signal integrated circuits, including distributed amplifiers (DAs), multiplexers (MUX) / demultip...

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Bibliographic Details
Main Authors: Driad, R., Makon, R.E., Hurm, V., Benkhelifa, F., Losch, R., Rosenzweig, J., Schlechtweg, M.
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Clocks
Cutoff frequency
DH-HEMTs
Distributed amplifiers
Indium phosphide
Integrated circuit technology
Mixed analog digital integrated circuits
Multiplexing
Voltage
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Summary:We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of Gt 4.5 V and cut-off frequency (f T ) values of Gt 300 GHz. Using this technology, state-of-the-art mixed signal integrated circuits, including distributed amplifiers (DAs), multiplexers (MUX) / demultiplexers (DEMUX), and clock and data recovery (CDR) ICs suitable for 100+ Gbit/s applications have been demonstrated. The DA-MMICs achieved gains of ~ 21 dB, 3-dB bandwidths of ges 95 GHz (gain-bandwidth-products Gt 1 THz), as well as output voltages of up to 3 V at 100 Gbit/s. A monolithically integrated CDR/1:2 DEMUX IC has also successfully been tested at data rates of up to 107 Gbit/s.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2009.5012407