High detection efficiency InGaAs/InP single photon avalanche photodiodes

InGaAs/InP avalanche photodiodes with high detection efficiency at 1.55 mum is reported in Geiger mode for single photon detection. In addition, mechanisms to improve device dark count rate versus photon detection efficiency performance are reported.

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Bibliographic Details
Main Authors: Yonglin Gu, Xiucheng Wu, Fow-Sen Choa
Format: Conference Proceeding
Language:English
Subjects:
Avalanche photodiodes
Cooling
Counting circuits
Indium gallium arsenide
Indium phosphide
Infrared detectors
Optical attenuators
Optical fiber communication
Superconducting device noise
Superconducting materials
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Description
Summary:InGaAs/InP avalanche photodiodes with high detection efficiency at 1.55 mum is reported in Geiger mode for single photon detection. In addition, mechanisms to improve device dark count rate versus photon detection efficiency performance are reported.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2009.5012462