Polarization-independent and ultra-high bandwidth electroabsorption modulator in multiquantum-well deep-ridge waveguide technology

Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity 23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RI...

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Bibliographic Details
Published in:IEEE photonics technology letters 1996-07, Vol.8 (7), p.891-893
Main Authors: Weinmann, R., Baums, D., Cebulla, U., Haisch, H., Kaiser, D., Kuhn, E., Lach, E., Satzke, K., Weber, J., Wiedemann, P., Zielinski, E.
Format: Article
Language:English
Subjects:
Bandwidth
Chirp modulation
Epitaxial growth
Epitaxial layers
Etching
Indium gallium arsenide
Planar waveguides
Polarization
Semiconductor waveguides
Tellurium
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Summary:Electroabsorption modulators with polarization-independence of transmission (TE/TM sensitivity 23 GHz/V. Polarization insensitivity of modulator transmission and chirp is demonstrated. Technical realization has been done in ridge waveguide technology with low-pressure MOVPE, reactive ion etching (RIE) for semiconductor etching and polyimide for planarization.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.502261