Numerical calculation of I-V characteristic curves of an ion implanted GaAs MESFET

A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth...

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Bibliographic Details
Main Author: Weng, T.H.
Format: Conference Proceeding
Language:English
Subjects:
Computer science
Doping profiles
Electron devices
Gallium arsenide
Implants
MESFETs
Permittivity
Poisson equations
Substrates
Threshold voltage
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Summary:A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson's equation.
DOI:10.1109/ICSICT.1995.503333