High speed interconnects on SOI substrates

A buried and highly conductive layer beneath the silicon surface is used to improve the shielding of the interconnects and to facilitate the transmission of high speed signals. The technology is based on the Bonded Etch-back Silicon On Insulator (BESOI) technique. No additional mask level is require...

Full description

Saved in:
Bibliographic Details
Main Authors: Plettner, A., Haberger, K., Englmaier, A., Hartmann, H.
Format: Conference Proceeding
Language:English
Subjects:
Crosstalk
Electric variables measurement
Electrical resistance measurement
Energy measurement
Oxidation
Semiconductor films
Silicon
Substrates
Thickness measurement
Wafer bonding
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A buried and highly conductive layer beneath the silicon surface is used to improve the shielding of the interconnects and to facilitate the transmission of high speed signals. The technology is based on the Bonded Etch-back Silicon On Insulator (BESOI) technique. No additional mask level is required and design freedom is hardly limited.
DOI:10.1109/ICSICT.1995.503342