Design of 1.2 GeV synchrotron light source for X-ray lithography at Samsung Heavy Industries

An 1.2 GeV electron storage ring being designed at Samsung Heavy Industries Daeduk R&D Center is optimized for X-ray lithography works for high density semiconductor devices and micro-machining. The lattice is a variation of a FODO arrangement with four quadrupole doublets. The circumference of...

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Bibliographic Details
Main Authors: Keeman Kim, Bumsoo Han, Kihun Joh, Sungmyun Kim, Byungmun Kim, Heunggyu Park, Jongpil Park, Jinsoo Kim, Wongu Kang, Kyungwoo Kang, Yuri Kim, Sangil Lee, Younghee Kim
Format: Conference Proceeding
Language:English
Subjects:
Design optimization
Electrons
Lattices
Light sources
Radio frequency
Semiconductor devices
Shape
Storage rings
Synchrotrons
X-ray lithography
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Summary:An 1.2 GeV electron storage ring being designed at Samsung Heavy Industries Daeduk R&D Center is optimized for X-ray lithography works for high density semiconductor devices and micro-machining. The lattice is a variation of a FODO arrangement with four quadrupole doublets. The circumference of 57.6 m includes four 2.1-m-long straight sections and two 3.09-m-long dispersion-free straight sections making the synchrotron a racetrack shape. Two dispersion-free straight sections are located between the doublets and reserved for diagnostics and insertion devices. The harmonic number is 96 and the corresponding RF frequency is 449.654 MHz. The critical X-ray wavelength from sixteen 1.16-m-long bending magnets is 9.55 /spl Aring/ and a superconducting wiggler is also included in the design considerations. The major features of the light source will be described.
DOI:10.1109/PAC.1995.504632