High-Temperature Operation of 1.26- \mum Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate

In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser w...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2009-05, Vol.15 (3), p.724-730
Main Authors: Arai, M., Nakashima, K., Fujisawa, T., Tadokoro, T., Kobayashi, W., Yuda, M., Kondo, Y.
Format: Article
Language:English
Subjects:
Epitaxial growth
Frequency measurement
Gallium arsenide
Indium gallium arsenide
InGaAs
Intensity modulation
laser
Laser noise
metamorphic
Noise measurement
Substrates
Temperature
uncooled
Waveguide lasers
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Summary:In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser with InGaP upper cladding and InAlGaAs lower cladding layers. This laser has achieved the highest continuous-wave operating temperature (173degC) reported for a metamorphic laser. We measured the relaxation oscillation frequency from the relative intensity noise and undertook a 10-Gb/s direct modulation experiment.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2008.2011564