Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps

High density three dimensional (3D) interconnects formed by high aspect ratio through silicon vias (TSVs) and fine pitch solder microbumps are presented in this paper. The aspect ratio of the TSV is larger than 10 and filled with Cu without voids; there are electrical nickel and immersion gold (ENIG...

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Bibliographic Details
Main Authors: Yu, A., Lau, J.H., Soon Wee Ho, Kumar, A., Hnin Wai Yin, Jong Ming Ching, Kripesh, V., Pinjala, D., Chen, S., Chien-Feng Chan, Chun-Chieh Chao, Chi-Hsin Chiu, Chih-Ming Huang, Chen, C.
Format: Conference Proceeding
Language:English
Subjects:
Assembly
Bonding
Copper
Etching
Fabrication
Lithography
Packaging machines
Stacking
Through-silicon vias
Tin
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Summary:High density three dimensional (3D) interconnects formed by high aspect ratio through silicon vias (TSVs) and fine pitch solder microbumps are presented in this paper. The aspect ratio of the TSV is larger than 10 and filled with Cu without voids; there are electrical nickel and immersion gold (ENIG) pads on top of the TSV as under bump metallurgy (UBM) layer. On the Si chip, Cu/Sn solder microbumps with 16 mum in diameter and 25 mum in pitch are fabricated. After singulating the Si chip and the Si carrier, there are joined together and the interconnection is formed between them through the solder micro bumps and the TSV.
ISSN:0569-5503
2377-5726
DOI:10.1109/ECTC.2009.5074039