A new electrode technology for high-density nonvolatile ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) memories

New electrode materials (Ir and IrO/sub 2/) are proposed for high-density nonvolatile ferroelectric random access memories (NVFERAMs). These electrodes are used in order to integrate ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) capacitors with standard CMOS technology. Excellent electrical character...

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Bibliographic Details
Main Authors: Bo Jiang, Balu, V., Tung-Sheng Chen, Shao-Hong Kuah, Lee, J.C., Chu, P.Y., Jones, R.E., Zurcher, P., Taylor, D.J., Kottket, M.L., Gillespie, S.J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
CMOS technology
Electric resistance
Electric variables
Electrodes
Fatigue
Ferroelectric materials
Nonvolatile memory
Polarization
Random access memory
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Summary:New electrode materials (Ir and IrO/sub 2/) are proposed for high-density nonvolatile ferroelectric random access memories (NVFERAMs). These electrodes are used in order to integrate ferroelectric (SrBi/sub 2/Ta/sub 2/O/sub 9/) capacitors with standard CMOS technology. Excellent electrical characteristics (e.g. low leakage and high polarization), good fatigue resistance and good mechanical properties (i.e. excellent adhesion to SiO/sub 2/ without using a glue layer) were obtained for the new capacitor structures.
DOI:10.1109/VLSIT.1996.507780