Effects of water vapor anneal on MIS devices made of nitrided gate dielectrics

Silicon nitride and oxynitride films are known to possess a number of attractive properties over thermal SiO/sub 2/ as gate dielectric for Field-Effect Transistors (FETs), including better resistance to impurity diffusion and higher dielectric constant. However, their poor interface properties have...

Full description

Saved in:
Bibliographic Details
Main Authors: Xiewen Wang, Khare, M., Ma, T.P.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
FETs
High-K gate dielectrics
Impurities
MIS devices
Nitrogen
Semiconductor films
Silicon
Thermal resistance
Transconductance
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Silicon nitride and oxynitride films are known to possess a number of attractive properties over thermal SiO/sub 2/ as gate dielectric for Field-Effect Transistors (FETs), including better resistance to impurity diffusion and higher dielectric constant. However, their poor interface properties have prevented their use as a mainstream gate dielectric. Even in the case of nitrodized oxides where the nitrogen content is minute, the reduced peak transconductance for n-channel transistors is still a major concern for many applications, despite their much improved reliability. This paper shows that a modest annealing treatment in a steam furnace yields dramatic improvement of FET's transconductance as well as its current driveability for devices containing nitrided gate while preserving their excellent reliability. Only results on silicon nitride based MNS devices are included.
DOI:10.1109/VLSIT.1996.507859