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In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks
H 2 , O 2 , NH 3 and CH 4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the poro...
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| creator | Posseme, N. Bouyssou, R. Chevolleau, T. David, T. Arnal, V. Chhun, S. Monget, C. Richard, E. Galpin, D. Guillan, J. Arnaud, L. Roy, D. Guillermet, M. Ramard, J. Joubert, O. Verove, C. |
| description | H 2 , O 2 , NH 3 and CH 4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration. |
| doi_str_mv | 10.1109/IITC.2009.5090398 |
| format | conference_proceeding |
| fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_5090398</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5090398</ieee_id><sourcerecordid>5090398</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-e51268a8b671abd825015c5c4533e5dd27b1b4715c381e75f4256385d557eea83</originalsourceid><addsrcrecordid>eNpVkF1LwzAYhePHwDn3A8Sb_IHOfDRtcinDaWHgzQTvRtq-3eLaZiSpsgv_u5kOwXNz4D2cB96D0C0lM0qJui-K1XzGCFEzQRThSp6hqcolTVkapbg6R2PGJUkyzuXFv4yxy7-MvY3Q9RETGUKlV2jq_TuJSgUnKh2jr6LH3oQB760PGEK1Nf0GBwc6dNAHrD3W2Nt2CMb2OFhsur2zH4BraKAK0fpYP-DGuohwdvC4tZ_JDps-wMbpn9rgj9AOgm5bU-GtdjXutN_5GzRqdOthevIJel08rubPyfLlqZg_LBNDcxESEJRlUssyy6kua8kEoaISVXyCg6hrlpe0TPN445JCLpqUiYxLUQuRA2jJJ-jul2sAYL13ptPusD4ty78B3h9ncA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks</title><source>IEEE Xplore All Conference Series</source><creator>Posseme, N. ; Bouyssou, R. ; Chevolleau, T. ; David, T. ; Arnal, V. ; Chhun, S. ; Monget, C. ; Richard, E. ; Galpin, D. ; Guillan, J. ; Arnaud, L. ; Roy, D. ; Guillermet, M. ; Ramard, J. ; Joubert, O. ; Verove, C.</creator><creatorcontrib>Posseme, N. ; Bouyssou, R. ; Chevolleau, T. ; David, T. ; Arnal, V. ; Chhun, S. ; Monget, C. ; Richard, E. ; Galpin, D. ; Guillan, J. ; Arnaud, L. ; Roy, D. ; Guillermet, M. ; Ramard, J. ; Joubert, O. ; Verove, C.</creatorcontrib><description>H 2 , O 2 , NH 3 and CH 4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration.</description><identifier>ISSN: 2380-632X</identifier><identifier>ISBN: 9781424444922</identifier><identifier>ISBN: 1424444926</identifier><identifier>EISSN: 2380-6338</identifier><identifier>EISBN: 9781424444939</identifier><identifier>EISBN: 1424444934</identifier><identifier>DOI: 10.1109/IITC.2009.5090398</identifier><identifier>LCCN: 2009903594</identifier><language>eng</language><publisher>IEEE</publisher><subject>Dielectric materials ; Etching ; Hydrogen ; Moisture ; Plasma applications ; Plasma chemistry ; Plasma materials processing ; Positron emission tomography ; Surface topography ; Tin</subject><ispartof>2009 IEEE International Interconnect Technology Conference, 2009, p.240-242</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5090398$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5090398$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Posseme, N.</creatorcontrib><creatorcontrib>Bouyssou, R.</creatorcontrib><creatorcontrib>Chevolleau, T.</creatorcontrib><creatorcontrib>David, T.</creatorcontrib><creatorcontrib>Arnal, V.</creatorcontrib><creatorcontrib>Chhun, S.</creatorcontrib><creatorcontrib>Monget, C.</creatorcontrib><creatorcontrib>Richard, E.</creatorcontrib><creatorcontrib>Galpin, D.</creatorcontrib><creatorcontrib>Guillan, J.</creatorcontrib><creatorcontrib>Arnaud, L.</creatorcontrib><creatorcontrib>Roy, D.</creatorcontrib><creatorcontrib>Guillermet, M.</creatorcontrib><creatorcontrib>Ramard, J.</creatorcontrib><creatorcontrib>Joubert, O.</creatorcontrib><creatorcontrib>Verove, C.</creatorcontrib><title>In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks</title><title>2009 IEEE International Interconnect Technology Conference</title><addtitle>IITC</addtitle><description>H 2 , O 2 , NH 3 and CH 4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration.</description><subject>Dielectric materials</subject><subject>Etching</subject><subject>Hydrogen</subject><subject>Moisture</subject><subject>Plasma applications</subject><subject>Plasma chemistry</subject><subject>Plasma materials processing</subject><subject>Positron emission tomography</subject><subject>Surface topography</subject><subject>Tin</subject><issn>2380-632X</issn><issn>2380-6338</issn><isbn>9781424444922</isbn><isbn>1424444926</isbn><isbn>9781424444939</isbn><isbn>1424444934</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2009</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpVkF1LwzAYhePHwDn3A8Sb_IHOfDRtcinDaWHgzQTvRtq-3eLaZiSpsgv_u5kOwXNz4D2cB96D0C0lM0qJui-K1XzGCFEzQRThSp6hqcolTVkapbg6R2PGJUkyzuXFv4yxy7-MvY3Q9RETGUKlV2jq_TuJSgUnKh2jr6LH3oQB760PGEK1Nf0GBwc6dNAHrD3W2Nt2CMb2OFhsur2zH4BraKAK0fpYP-DGuohwdvC4tZ_JDps-wMbpn9rgj9AOgm5bU-GtdjXutN_5GzRqdOthevIJel08rubPyfLlqZg_LBNDcxESEJRlUssyy6kua8kEoaISVXyCg6hrlpe0TPN445JCLpqUiYxLUQuRA2jJJ-jul2sAYL13ptPusD4ty78B3h9ncA</recordid><startdate>200906</startdate><enddate>200906</enddate><creator>Posseme, N.</creator><creator>Bouyssou, R.</creator><creator>Chevolleau, T.</creator><creator>David, T.</creator><creator>Arnal, V.</creator><creator>Chhun, S.</creator><creator>Monget, C.</creator><creator>Richard, E.</creator><creator>Galpin, D.</creator><creator>Guillan, J.</creator><creator>Arnaud, L.</creator><creator>Roy, D.</creator><creator>Guillermet, M.</creator><creator>Ramard, J.</creator><creator>Joubert, O.</creator><creator>Verove, C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>200906</creationdate><title>In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks</title><author>Posseme, N. ; Bouyssou, R. ; Chevolleau, T. ; David, T. ; Arnal, V. ; Chhun, S. ; Monget, C. ; Richard, E. ; Galpin, D. ; Guillan, J. ; Arnaud, L. ; Roy, D. ; Guillermet, M. ; Ramard, J. ; Joubert, O. ; Verove, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-e51268a8b671abd825015c5c4533e5dd27b1b4715c381e75f4256385d557eea83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Dielectric materials</topic><topic>Etching</topic><topic>Hydrogen</topic><topic>Moisture</topic><topic>Plasma applications</topic><topic>Plasma chemistry</topic><topic>Plasma materials processing</topic><topic>Positron emission tomography</topic><topic>Surface topography</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Posseme, N.</creatorcontrib><creatorcontrib>Bouyssou, R.</creatorcontrib><creatorcontrib>Chevolleau, T.</creatorcontrib><creatorcontrib>David, T.</creatorcontrib><creatorcontrib>Arnal, V.</creatorcontrib><creatorcontrib>Chhun, S.</creatorcontrib><creatorcontrib>Monget, C.</creatorcontrib><creatorcontrib>Richard, E.</creatorcontrib><creatorcontrib>Galpin, D.</creatorcontrib><creatorcontrib>Guillan, J.</creatorcontrib><creatorcontrib>Arnaud, L.</creatorcontrib><creatorcontrib>Roy, D.</creatorcontrib><creatorcontrib>Guillermet, M.</creatorcontrib><creatorcontrib>Ramard, J.</creatorcontrib><creatorcontrib>Joubert, O.</creatorcontrib><creatorcontrib>Verove, C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Posseme, N.</au><au>Bouyssou, R.</au><au>Chevolleau, T.</au><au>David, T.</au><au>Arnal, V.</au><au>Chhun, S.</au><au>Monget, C.</au><au>Richard, E.</au><au>Galpin, D.</au><au>Guillan, J.</au><au>Arnaud, L.</au><au>Roy, D.</au><au>Guillermet, M.</au><au>Ramard, J.</au><au>Joubert, O.</au><au>Verove, C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks</atitle><btitle>2009 IEEE International Interconnect Technology Conference</btitle><stitle>IITC</stitle><date>2009-06</date><risdate>2009</risdate><spage>240</spage><epage>242</epage><pages>240-242</pages><issn>2380-632X</issn><eissn>2380-6338</eissn><isbn>9781424444922</isbn><isbn>1424444926</isbn><eisbn>9781424444939</eisbn><eisbn>1424444934</eisbn><abstract>H 2 , O 2 , NH 3 and CH 4 in situ post-etching treatments (PET) have been investigated as a solution to prevent the residues formation (TiFx based) on TiN metallic hard mask (MHM) after etching in fluorocarbon based plasmas. The PET impact on the residues growth reduction on the mask and on the porous SiOCH modification is presented and discussed. The compatibility of the different PET is also evaluated for C045 dual damascene level using trench first MHM integration.</abstract><pub>IEEE</pub><doi>10.1109/IITC.2009.5090398</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 2380-632X |
| ispartof | 2009 IEEE International Interconnect Technology Conference, 2009, p.240-242 |
| issn | 2380-632X 2380-6338 |
| language | eng |
| recordid | cdi_ieee_primary_5090398 |
| source | IEEE Xplore All Conference Series |
| subjects | Dielectric materials Etching Hydrogen Moisture Plasma applications Plasma chemistry Plasma materials processing Positron emission tomography Surface topography Tin |
| title | In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T14%3A21%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=In%20situ%20post%20etching%20treatment%20as%20a%20solution%20to%20improve%20defect%20density%20for%20porous%20low-k%20integration%20using%20metallic%20hard%20masks&rft.btitle=2009%20IEEE%20International%20Interconnect%20Technology%20Conference&rft.au=Posseme,%20N.&rft.date=2009-06&rft.spage=240&rft.epage=242&rft.pages=240-242&rft.issn=2380-632X&rft.eissn=2380-6338&rft.isbn=9781424444922&rft.isbn_list=1424444926&rft_id=info:doi/10.1109/IITC.2009.5090398&rft.eisbn=9781424444939&rft.eisbn_list=1424444934&rft_dat=%3Cieee_CHZPO%3E5090398%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i175t-e51268a8b671abd825015c5c4533e5dd27b1b4715c381e75f4256385d557eea83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5090398&rfr_iscdi=true |