From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

In this paper an extensive investigation of hybrid molecular/silicon field-effect memories is presented, where Redox Ferrocene (Fc) molecules play the role of the memory charge storage nodes. Engineering of the organic linkers between Fc and Si is achieved by grafting Fc with different linker length...

Full description

Saved in:
Bibliographic Details
Main Authors: Buckley, J., Pro, T., Barattin, R., Calborean, A., Huang, K., Aiello, V., Nicotra, G., Gely, M., Delapierre, G., Jalaguier, E., Duclairoir, F., Chevalier, N., Mariolle, D., Spinella, C., Lombardo, S., Blaise, P., Maldivi, P., Ghibaudo, G., Baptist, R., De Salvo, B.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Atomic layer deposition
Atomic measurements
Chemical analysis
Density functional theory
Density measurement
Electric variables measurement
Photoelectron microscopy
Silicon
Transmission electron microscopy
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper an extensive investigation of hybrid molecular/silicon field-effect memories is presented, where Redox Ferrocene (Fc) molecules play the role of the memory charge storage nodes. Engineering of the organic linkers between Fc and Si is achieved by grafting Fc with different linker lengths. The study shows a clear correlation between results from atomistic computational Density Functional Theory (DFT), electrochemical measurements (Cyclic Voltammetry) and electrical data obtained by a detailed study on Pseudo-MOS devices. Physical- chemical analyses (Atomic Force Microscopy, high-resolution Transmission Electron Microscopy, X-Ray Photoelectron Spectroscopy), were used to monitor the molecular layers.
ISSN:2159-483X
DOI:10.1109/IMW.2009.5090591