Wigner Monte Carlo Simulation of CNTFET: Comparison Between Semi-Classical and Quantum Transport

This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner's function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic le...

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Bibliographic Details
Main Authors: Huu-Nha Nguyen, Querlioz, Damien, Galdin-Retailleau, Sylvie, Bournel, Arnaud, Dollfus, Philippe
Format: Conference Proceeding
Language:English
Subjects:
Boltzmann equation
Carbon nanotubes
CNTFETs
FETs
Microscopy
Monte Carlo methods
MOSFETs
Particle scattering
Poisson equations
Tunneling
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Summary:This paper examines the quantum transport effects in carbon nanotube field-effect transistors (CNTFETs) within the Wigner's function formalism, using a particle Monte Carlo technique. The comparison with semi-classical simulation shows that significant differences observed at the microscopic level are not necessarily strongly reflected at the macroscopic level in terms of drain current. The dependence of quantum effects on gate length is also investigated.
DOI:10.1109/IWCE.2009.5091161