Self-shielding: new high-voltage inter-connection technique for HVICs

A new, cost-effective, high-voltage inter-connection technique for HVICs, named Self-Shielding, is proposed. To avoid the lowering of breakdown voltage of high-voltage devices affected by the electric potential of overlying interconnections, self-shielding technique utilizes only the native PN-junct...

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Bibliographic Details
Main Authors: Fujihira, T., Yano, Y., Obinata, S., Kumagai, N., Sakurai, K.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Costs
Electric potential
Insulated gate bipolar transistors
Insulation
Integrated circuit interconnections
Power supplies
Production facilities
Research and development
Timing
Online Access:Request full text
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Summary:A new, cost-effective, high-voltage inter-connection technique for HVICs, named Self-Shielding, is proposed. To avoid the lowering of breakdown voltage of high-voltage devices affected by the electric potential of overlying interconnections, self-shielding technique utilizes only the native PN-junction structures of high-voltage devices themselves. No additional shielding structure is required even to realize a very high-voltage IC above 1000 V. Design concept and device structures are presented together with the experimental results on the operation of self-shielded 1200 V level-shifters.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1996.509488