Applications of a generalized Dirichlet principle to transistor modeling

We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.

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Main Authors: Winson, P., Snider, A.D.
Format: Conference Proceeding
Language:English
Subjects:
Boundary conditions
Data mining
Electric variables measurement
Integral equations
Mathematical model
MESFETs
Poisson equations
Scattering parameters
Transconductance
Voltage
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Snider, A.D.
description We report the theory, implementation and results of using a Poisson solver to compensate the measured valuer of drain conductance and transconductance in a nonlinear MESFET so as to render them compatible with a large-signal model. The consequent restructuring of the I-V curves is exhibited.
doi_str_mv 10.1109/SECON.1996.510104
format conference_proceeding
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identifier ISBN: 9780780330887
ispartof Proceedings of SOUTHEASTCON '96, 1996, p.425-427
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Boundary conditions
Data mining
Electric variables measurement
Integral equations
Mathematical model
MESFETs
Poisson equations
Scattering parameters
Transconductance
Voltage
title Applications of a generalized Dirichlet principle to transistor modeling
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