A high power and high efficiency power amplifier for local multipoint distribution service

This paper presents a high power and high efficiency MIC power amplifier using 0.2 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices. The average performance of the power amplifier is 8.75 dB small signal gain, 39.6% power-added-efficiency, and 37 dBm (5.0 W) from 27.5 to 29.5 GHz. At...

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Bibliographic Details
Main Authors: Siddiqui, M.K., Sharma, A.K., Callejo, L.G., Chung-Hsu Chen, Kin Tan, Huan-Chun Yen
Format: Conference Proceeding
Language:English
Subjects:
Distributed amplifiers
Frequency
Gain
Gallium arsenide
High power amplifiers
Microwave integrated circuits
Millimeter wave technology
PHEMTs
Power amplifiers
Space technology
Online Access:Request full text
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Description
Summary:This paper presents a high power and high efficiency MIC power amplifier using 0.2 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices. The average performance of the power amplifier is 8.75 dB small signal gain, 39.6% power-added-efficiency, and 37 dBm (5.0 W) from 27.5 to 29.5 GHz. At these power levels, the output power density was 780 mW/mm including output circuit losses. This represents the highest output power and efficiency ever reported at Ka-band using MIC amplifiers.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1996.511036