New aspects concerning the bias and temperature dependence of intrinsic noise generators in extracted FET models

A systematic experimental investigation of FET noise models illustrates bias and temperature dependencies that help to explain differences between two prevalent models. Observations concerning the bias dependence of the popular temperature based noise model show that the gate noise temperature follo...

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Bibliographic Details
Main Authors: Lardizabal, S.M., Dunleavy, L.P., Boudiaf, A.
Format: Conference Proceeding
Language:English
Subjects:
Circuit noise
Design automation
Microwave FETs
Neodymium
Noise figure
Noise generators
PHEMTs
Temperature dependence
Thermal resistance
Working environment noise
Online Access:Request full text
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Description
Summary:A systematic experimental investigation of FET noise models illustrates bias and temperature dependencies that help to explain differences between two prevalent models. Observations concerning the bias dependence of the popular temperature based noise model show that the gate noise temperature follows the ambient temperature only near the minimum noise bias condition.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1996.512180