Effect of device layout on the thermal resistance of high-power thermally-shunted heterojunction bipolar transistors

The effect of device layout on thermal impedance of thermally-shunted HBTs was investigated. A direct comparison of thermally shunted devices and standard airbridge devices is made. Changes in thermal resistance of up to 67% were observed. While thermal resistance remains sensitive to emitter elemen...

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Bibliographic Details
Main Authors: Dettmer, R., Jenkins, T., Barrette, J., Bozada, C., Desalvo, G., Ebel, J., Gillespie, J., Havasy, C., Ito, C., Nakano, K., Pettiford, C., Quach, T., Sewell, J., Via, D., Anholt, R.
Format: Conference Proceeding
Language:English
Subjects:
Current distribution
Fingers
Heat sinks
Heterojunction bipolar transistors
Impedance
Laboratories
Temperature
Thermal force
Thermal management
Thermal resistance
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Summary:The effect of device layout on thermal impedance of thermally-shunted HBTs was investigated. A direct comparison of thermally shunted devices and standard airbridge devices is made. Changes in thermal resistance of up to 67% were observed. While thermal resistance remains sensitive to emitter element placement in thermally shunted devices, variations in the location of thermal shunt landings had little effect. These results provide a basis for optimizing thermally-shunted devices.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1996.512245