A 0.13-µm CMOS multi-band WCDMA/HSDPA receiver adopting silicon area reducing techniques

A multi-band WCDMA/HSDPA direct-conversion receiver to cover all six 3 GPP bands is implemented in a 0.13-m CMOS process. The integrated inductor structure sharing an inner diameter and the mixed-type DC offset correction technique are useful to reduce the increase of silicon area generated by reali...

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Bibliographic Details
Main Authors: Hyunwon Moon, Juyoung Han, Seung-Il Choi, Dongjin Keum, Byeong-Ha Park
Format: Conference Proceeding
Language:English
Subjects:
Baseband
CMOS
CMOS process
DCOC
direct-conversion
Frequency synthesizers
inductor
Inductors
Low pass filters
Low-noise amplifiers
multi-band
Multiaccess communication
Radio frequency
Silicon
Transceivers
WCDMA/HSDPA
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Description
Summary:A multi-band WCDMA/HSDPA direct-conversion receiver to cover all six 3 GPP bands is implemented in a 0.13-m CMOS process. The integrated inductor structure sharing an inner diameter and the mixed-type DC offset correction technique are useful to reduce the increase of silicon area generated by realizing the multi-band multi-mode RF transceiver. The measured full-path receiver performance is NF of < 3 dB, IIP3 of > -17 dBm, and IIP2 of > +30 dBm for all six bands. Its current consumption including frequency synthesizer is 45 mA at 2.8 V supply.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2009.5135480