DRAM failure analysis with the force-based scanning Kelvin probe

A fabrication induced failure in complementary metal-oxide-semiconductor dynamic random access memory (CMOS DRAM) cells has been imaged successfully with a novel combination of atomic force and scanning Kelvin probe microscopes. The imaging system was used to verify the presence, and subsequent remo...

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Bibliographic Details
Main Authors: Hochwitz, T., Henning, A.K., Daghlian, C., Bolam, R., Coutu, P., Gluck, R., Slinkman, J.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Educational institutions
Equations
Fabrication
Failure analysis
Frequency
Kelvin
Pollution measurement
Probes
Random access memory
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Description
Summary:A fabrication induced failure in complementary metal-oxide-semiconductor dynamic random access memory (CMOS DRAM) cells has been imaged successfully with a novel combination of atomic force and scanning Kelvin probe microscopes. The imaging system was used to verify the presence, and subsequent removal of, ionic contaminants on a sub-micron scale.
DOI:10.1109/RELPHY.1995.513682